నైరూప్య

Novelties in Data Storage Devices

Muhammad Sultan Irshad

With the rapid growth of electronic technology, higher speed and denser memories are required to meet the trends of Moore's law for miniaturization of devices. This project enhanced my experimental approach and developed my interest to discover new ideas in the advancement of thin film-based devices. I have learnt a lot of experimental techniques especially deposition of thin films techniques hydro-thermal, spin coating method, extract of natural green material e.g. extracts of orange peel and synthesis of nano particle such as synthesize of TiO2 nano particle through co-precipitation method. We have design TiO2 based resistive random-access memory (RRAM) which is basically a two terminal device and composed of dielectric insulating layer that is sandwiched between two metal electrodes. Resistive RAM works on the principle by changing the resistance through solid dielectric layer under voltage sweep which means device can be programmed into low resistance state (LRS) or ON state and high resistance state (HRS) or OFF state. We have successfully deposit TiO2 thin films on transparent fluorine doped tin oxide (FTO) glass substrate under various reaction time and different protocol. Prepared thin films were characterized structurally, electrically, optically and especially resistive switching behavior. we have found hybrid phase (anatase & rutile) of TiO2 exhibits more resistive switching behavior than single rutile phase on behalf of point defects or oxygen vacancies inside oxide layer. Optical analysis reveals the existence of oxygen vacancies and Ti interstitial defects inside TiO2 oxide layer. Finally, we have succeeded to demonstrate the bipolar nature of resistive switching in TiO2 layer at very low voltage regime.